High-aspect-Ratio TGV（Through Glass Via）Filling Technology 2026/09/29

Introductions

Utilizing advanced all-wet metallization and low-additive electroplating processes, this technology overcomes conventional limitations in high-aspect-ratio filling, bath stability and thin-glass reliability. It delivers highly uniform, low-defect TGV substrates with mass production capability. Supporting large-area panel sizes (310 × 310 mm and 510 × 515 mm), this solution significantly improves filling efficiency while reducing the processing time of chemical mechanical planarization (CMP).

Technical Advantages and Features

• High Adhesion Promoting Layer: Synthesis of a low-viscosity composite metal oxide solution. Formation of nano-/micro-porous structures. Adhesion strength ≥ 6 N/cm.
• Void-free High-aspect-ratio Copper Filling: Electroplating bath life > 3 months for via filling. Aspect ratio (AR): 10–20, with surface copper thickness ≤ 25 μm.
• Panel-level TGV Glass Substrates: Wafer-level compatibility supports 8-inch to 12-inch TGV wafers. Panel-level compatibility supports 310 × 310 mm and 510 × 515 mm TGV substrates.

Industrial Applications and Business Opportunities

• Industry Applications
  • Advanced packaging and heterogeneous integration, high-performance computing (HPC), silicon photonics, high-end sensors, and imaging modules.
• Application Examples
  • This technology significantly enhances productivity by reducing overall processing time by 20% and extending the electroplating bath life by 2×.
  • The low surface copper thickness design further reduces CMP processing time by ≥ 30%, enabling high-aspect-ratio (AR 10–20) TGV filling.
  • We have established a robust ecosystem with domestic equipment suppliers, chemical suppliers, and end-users. By integrating TGV drilling, metallization, and copper filling, we have completed full-glass substrate integration and verification and are actively driving industrial deployment.