# 雷射輔助碳化矽晶圓快速拋光技術

Abstract：This article describes the laser-assisted rapid polishing technology for silicon carbide wafers. The ultrafast laser induces a multi-photon molecular bond dissociation effect, to modify and soften the silicon carbide and destroy the bond, then decomposed into silicon (Si), carbon (C) and amorphous silicon carbide (Amorphous SiC). After the modification and softening, the surface of the silicon carbide wafer presents a columnar periodic microstructure, which can be easily removed by the mechanical stress of the polishing process. This method can greatly reduce the hardness of silicon carbide by more than 90%, accelerate the process rate of silicon carbide wafers by about 30%, and greatly reduce the consumption of polishing consumables.

Keywords：Ultra-fast laser, Silicon carbide, Polishing