MOCVD高溫加熱系統模擬技術

加熱器為MOCVD設備中的關鍵零組件，本案以Veeco D-180內部加熱系統作為研究目標，為了使加熱後載台表面溫度分佈均勻，總共進行三項數值分析，分別是二區段加熱片陣列形狀分析、載台材料分析、間距分析（加熱片與載台之間距離）。藉由以上分析，加熱器優化參數條件有：（1） D-180加熱片、（2）載台材質選用碳化矽、（3）間距為4 mm。最後，從加熱器模擬分析結果可得到，載台表面溫度不均勻度為0.66 %，成功模擬設計出MOCVD 高溫加熱系統。

The heater is a key component in the MOCVD reaction chamber. The goal of the simulation results can be applied to the heating system of a Veeco D-180 reactor. In order to keep the susceptor surface temperature uniform, this study has completed three analyses: two-heating zones analysis, susceptor material analysis, and distance analysis (between the filament and the susceptor). From these analyses, the good conditions of heater design can be obtained based on the D-180 pattern, susceptor material (SiC) and distance (4 mm) for this key component. Finally, the best results from these analyses have a susceptor surface temperature non-uniformity of 0.66 %. The study can demonstrate successfully that the simulated and the design of MOCVD high temperature heating system can be achieved by using numerical analysis.