半導體微波退火技術
簡介 Introductions
傳統半導體摻雜活化退火需九百度 C 以上，隨著線寬縮減，容易造成雜質擴散。因此，開發微波退火以克服日益緊縮的半導體熱預算。工研院領先開發出多重模態微波退火，並符合半導體之低溫退火規範。
The traditional semiconductor doping activation annealing requires more than 900 degrees C, and as the line width decreases, it is easy to cause impurity diffusion. Therefore, microwave annealing was developed to overcome increasingly tight semiconductor thermal budgets. ITRI has pioneered the development of multimodal microwave annealing, which meets the low temperature annealing specifications for semiconductors.
特色與創新 Characters and Innovations
- 縱橫奇偶多重模態彌補低頻模態數之不足提升均勻性。
- 模組化電源供應器提升功率輸出穩定性，讓微波退火可長時間穩定操作。
- 對多微波源，開創微波之耦合模態，大幅提升微波均勻性。
- The shortage of vertical and horizontal odd-even analog and multimode to improve performance and good quality.
- The integrated power supply improves power stability, so that the microwave oven can operate stably for a long time.
- For multiple microwave sources, the combined modes of both sides have a fatal mean rise.
應用與效益 Applications and Benefits
- 已與國內半導體大廠合作開發下世代半導體微波退火製程及設備，同時擴大應用至化工產業、食品加工業、及資源回收業之節能減碳應用。
- It has cooperated with domestic semiconductor manufacturers to develop the next-generation semiconductor microwave annealing process and equipment, while expanding its application to energy- saving and carbon-reducing applications in the chemical industry, food processing industry, and resource recycling industry.
聯絡 contact
更多資訊
微波退火-詳細版