可視化磊晶製程
簡介 Introductions
工研院獨創高溫流場可藐化設酐驗證載台1 來模擬接近真實磊晶製程環境，作為此軟體預測鍍率及膜厚均勻度之研究基礎。經由CyberEpi 磊晶製程操作人員獲得製程參數時間自1週縮短至2小時，而數位化精準決定參數的分析準確度也自92％提高95%，進而促使襪台產能預期增加2倍以上及新產品上市時間自3個月縮短至1個月。此技術應用領域可由LED產業延伸至無線通訊、半導體、太陽能光電等三五族材料製程領域之MOCVD磊晶製造設備。
CyberEpi is a cyber-physical system that can determine atomic epitaxial processes for optimization of MOCVD machines based on experiment as well as numerical simulation and flow filed visualization analyses into a big data platform. With Chemical Reaction Control Technology (SCRCT) and Heat Flow Control Technology (HFCT), manual control of traditional epitaxial processes is transferred to a digitized control system for process prediction. CyberEpi delivers an easy-to-use App that rapidly identifies optimal operation parameters in minutes and further enables design of high-yield, high-performance machines. This lowers R&D costs and reduces the time to market of products, allowing users to be highly competitive in the optoelectronics and semiconductor industries.
