晶圓式離子能量量測模組
技術簡介 Abstract
半導體電漿製程中，晶圓表面之離子能量大小及空間分佈情形極為關鍵。晶圓式離子能量分析模組具有19個GiEA量測單元，可用以量測晶圓上離子能量空間分佈情形。 GiEA (Gridded ion Energy Analyzer)量測單元具有低離子散射及高能量解析度能力，可大幅提升量測準確度。
The magnitude and distribution of the ion energy on wafer are key parameters for semiconductor plasma processing. There are 19 GiEA(Gridded ion Energy Analyzer) units built on the wafer type ion energy diagnostic module, which can be used to measure the spatial ion energy distribution on processing wafer area. The advance features of ITRI’s GiEA (Gridded ion Energy Analyzer) are low ion scattering effect and high energy resolution which can increase the measuring accuracy.
產業需求 Needs
電漿離子能量對於蝕刻及鍍膜製程極為重要，會影響蝕刻速率及薄膜品質，半導體設備開發業者急需量測工具，用以分析製程面積上離子能量分佈情形。
The information of ion energy on wafer is very important for plasma etch and deposition process, it affects the etch rate and film quality. The diagnostic tool for analyzing the spatial distribution of ion energy is urgent needed for the semiconductor process equipment developer.
解決方案 Solution
12吋晶圓式離子能量分析模組，於製程面積上，佈建19個量測點位，每個點位埋入一個柵極式離子能量鑑別分析單元，用以量測到達晶圓表面離子能量之空間分佈均勻性。
The 12” wafer type ion energy analyzer module built on 19 GiEA units was proposed to measure and analyze the special distribution uniformity of ion energy and ion flux on the processing wafer area.
技術創新點 Differentiation
ITRI所開發之柵極式離子能量鑑別分析單元GiEA，由三層柵極及一層離子電流收集層所組成，透過精準柵極孔對位以降低離子散射影響，以及低噪電流量測技術提高電壓-電流量測解析度，可提高離子能量解析能力。
The GiEA was constructed with 3 grid meshes and an ion current collect cathode layer. The precise aligned mesh holes between three grids can reduce the scattering effect when ion penetrates to current collect layer. The low noise measurement technique used for voltage and current measuring can improve the ion energy resolution.
應用及效益 Benefit
應用領域：光電半導體電漿蝕刻、鍍膜設備及其製程開發
領先地位：國內自有技術
效益：透過本模組技術，可縮短電漿設備開發時程及製程調機時間
Application: plasma etch/deposition equipment and process development for semiconductor and optoelectronic manufacturing industry.
Status: domestic own technology
Value Proposition & Social Impact: development time saving of the plasma process equipment and process tuning, Increase industrial competitiveness.
