晶圓式電漿感測系統

目前半導體製程中對電漿參數的即時監測仍依賴機台端感測器與製程後的檢測分析，無法直接掌握 製程中晶圓表面的實際電漿條件。晶圓式電漿感測系統可直接模擬實際晶圓，在製程環境中即時收集電 漿參數，有效彌補目前缺乏「製程原位感測」的技術缺口，有助於提高製程控制精度與產品良率。本晶 圓式電漿感測系統採用與12 吋製程晶圓相同尺寸與材質之感測晶圓，具備高度相容性，能直接進入製程 反應腔體中，不影響原有設備運作，其透過內建多點感測元件，可即時量測電漿製程中的電漿特性參數， 如：電漿電位、浮動電位、電漿密度等關鍵參數。相較於傳統診斷系統於腔體外部侵入進行單點感測方式， 本系統能快速透過感測晶圓多點蒐集的數據，提供更接近實際製程條件下的真實量測資訊，並可完整反 映製程腔體中不同位置的電漿行為，將有效協助製程優化、故障診斷與設備維護。此技術將能應用於先 進半導體製程中的電漿蝕刻與薄膜沉積設備，能大幅提升製程控制精度、穩定性與最終產品良率，並有 助於縮短製程開發週期與降低生產成本。

Current real-time monitoring of plasma parameters in semiconductor manufacturing relies on toolbased sensors and post-process inspection, making it impossible to directly ascertain the actual plasma conditions at the wafer surface during processing. Wafer-based plasma sensing systems can directly simulate actual wafers to collect plasma parameters in real-time within the processing environment; this effectively bridges the gap in “insitu process sensing” capabilities and helps improve process control precision and product yield. The wafer-based plasma sensing system utilizes a sensor wafer that matches the size and material of a 12-inch process wafer, ensuring high compatibility and allowing it to enter the process chamber without affecting existing equipment operations. Equipped with built-in multi-point sensors, the system can perform real-time measurements of key plasma parameters such as plasma potential, floating potential, and plasma density during plasma processes. Compared to traditional diagnostic systems that rely on intrusive, single-point measurements from outside the chamber, this system rapidly collects data from multiple points across the sensor wafer, providing accurate and representative measurements under actual process conditions. It enables comprehensive monitoring of plasma behavior across different locations in the chamber, which significantly aids in process optimization, fault diagnosis, and equipment maintenance. This technology is particularly suited for advanced semiconductor processes such as plasma etching and thin-film deposition, offering substantial improvements in process control precision, stability, and final product yield. Additionally, it helps shorten process development cycles and reduce manufacturing costs.