電漿製程之源頭減碳與模擬分析技術應用

隨著全球氣候變遷議題益受關注，各國陸續提出淨零碳排政策，並透過碳稅、碳足跡揭露等方 式加速產業邁向低碳製造。電子產業廣泛應用之電漿製程，包含表面清潔、蝕刻皆普遍使用四氟化碳 (Tetrafluoromethane, CF4) 作為氣體源，然而其具備高全球暖化潛勢 (Global Warming Potential, GWP) 特性， 成為相關產業溫室氣體排放的來源之一。相較於製程尾氣處理設備所採取之汙染物淨化處理防制模式，若 能從製程源頭導入低暖化潛勢替代氣體，並透過模擬分析技術與製程參數優化以保持原有製程效能，便具 備產業減碳效益。本文以電漿清潔製程為探討，選定低暖化潛勢之替代氣體後，先建立電漿製程腔體三維 幾何模型，以工研院機械所建立之氣流場模擬技術分析CF4 和低GWP 值替代氣體於腔體內部之流場分布 與基板區域氣流均勻度，確認替代氣體和CF4 氣流場分布相近，再透過電漿設備進行製程實驗參數優化， 驗證替代氣體實際應用可行性，經計算該製程碳排當量降低21.8%，顯示源頭減碳策略具有實質效益，可 做為未來源頭減碳技術之參考依據。

As global concerns over climate change continue to intensify, countries worldwide have introduced net-zero carbon policies and accelerated the transition toward low-carbon manufacturing through mechanisms such as carbon taxation and product carbon footprint disclosure. Plasma processes widely used in the electronics industry, including surface cleaning and etching operations, commonly utilize tetrafluoromethane (CF4) as a process gas. However, due to its high Global Warming Potential (GWP), CF4 has become a significant source of greenhouse gas emissions in related industries. Compared with conventional pollution control approaches that rely on exhaust gas treatment systems, greater carbon reduction benefits may be achieved by introducing low- GWP alternative gases at the process source while maintaining process performance through simulation analysis and parameter optimization. This article presents a plasma cleaning process by selecting a low-GWP alternative gas and establishing a three-dimensional geometric model of the plasma chamber. Computational fluid dynamics (CFD)-based airflow simulation technology developed by the MMSL in ITRI was employed to analyze flow distribution and gas uniformity in substrate regions. The results confirmed that the alternative gas exhibited flow characteristics comparable to CF4 . Subsequent process optimization demonstrated the practical feasibility of the alternative gas and achieved a 21.8% reduction in carbon-equivalent emissions, providing a valuable reference for future low-carbon process development.