解鎖TGV 銅填孔技術中通孔間距扮演的關鍵角色

玻璃通孔 (Through-Glass Via, TGV) 技術為次世代先進封裝與面板級異質整合的重要關鍵。然而， 高深寬比TGV 銅填孔製程容易受到添加劑交互作用、電流分布及通孔間距 (pitch) 差異影響，導致孔洞、 填孔不均勻等缺陷。本研究提出結合階梯式脈衝電鍍與單一添加劑系統創新銅填孔技術，透過脈衝電流 調控與沉積行為最佳化，有效平衡不同pitch 結構中的銅成長速率，實現均勻且無缺陷的由下而上填孔， 同時，導入應力緩衝層設計，降低研磨製程中殘留應力及玻璃破裂風險。本技術可於不同pitch 條件下達 成高品質、低面銅且無缺陷之TGV 銅填孔，具備大面積面板製程與量產應用潛力。

Through-Glass Via (TGV) technology has become a key enabler for next-generation advanced packaging and panel-level heterogeneous integration. However, copper filling in high-aspect-ratio TGV structures is strongly influenced by additive interactions, current distribution, and via pitch variations, often resulting in voids and non-uniform filling defects. In this study, an innovative copper filling approach combining stepwise pulse electroplating with a single-additive system is proposed. By optimizing pulse current modulation and deposition behavior, the developed process effectively balances copper growth rates across different pitch structures, enabling uniform and defect-free bottom-up filling. In addition, a stress-buffer layer is introduced to reduce residual stress and minimize glass breakage risk during the grinding process. The proposed technology successfully achieves high-quality, low-overburden, and defect-free TGV copper filling under various pitch conditions, demonstrating strong potential for large-area panel processing and mass production applications.