應用於半導體設備之高濃度臭氧陶瓷金屬電極製作及封裝技術

目前高濃度臭氧產生系統主要應用於CVD、ALD、清洗等半導體製程中，其設備主要由國際大廠所供應，其中最關鍵的零組件耗材為臭氧產生之陶瓷電極電極，因其電極壽命只有一年左右且目前僅能由國外大廠提供。為因應先進製程中高濃度臭氧 ( > 13% ) 長時間穩定供應的挑戰，本研究針對臭氧產生器之關鍵元件─陶瓷金屬電極，提出一套具高介電強度、高附著力與高可靠度之製作與封裝技術。本文將以介電常數約9 (@1 MHz) 的氧化鋁陶瓷為基板材料，並搭配陶瓷雷射金屬化技術 (Ceramic Laser Metallization, CLM)，將導電金屬電極嵌入陶瓷基板內部實現共平面結構，並透過晶圓級壓合工法進行電極模組封裝，有效降低側邊漏電、裂片風險與提升電極面積。結果顯示所製作之臭氧反應電極模組可於8 kV高電壓條件下具備優異穩定性與壽命表現，展現應用於半導體用高濃度臭氧產生器的潛力。

High-concentration ozone generation systems are primarily employed in advanced semiconductor processes such as CVD, ALD, and wafer cleaning. These systems are predominantly supplied by major international manufacturers, with the most critical consumable component being the ceramic ozone electrode. Due to a typical operational lifespan of only about one year and the lack of domestic production capabilities, such electrodes must currently be sourced from foreign suppliers. To address the challenges of long-term stable supply of high-concentration ozone (>13%) required by advanced processes, this study proposes a fabrication and packaging methodology for the key component of ozone generators—the ceramic-metal electrode—with enhanced dielectric strength, adhesion, and reliability. In this work, alumina ceramic with a dielectric constant of approximately 9 (at 1 MHz) is employed as the substrate material. A ceramic laser metallization (CLM) process is utilized to embed conductive metal electrodes within the ceramic substrate, forming a coplanar structure. The electrode module is then packaged using a wafer-level lamination process, which effectively reduces edge leakage, mitigates chipping risks, and increases the electrode surface area. Experimental results demonstrate that the fabricated ozone reaction electrode module exhibits excellent operational stability and lifespan under high-voltage conditions up to 8 kV, highlighting its strong potential for application in high-concentration ozone generators for semiconductor manufacturing.